High-power InP diode lasers operating under long-pulse condition with high reliability

For semiconductor laser bars based on InP substrate, which has different physical properties from that of GaAs, it is necessary to develop packaging technologies with low thermal resistance and low packaging stress to achieve high reliability and high-power performance. We report here InP-based 1470 nm laser bar devices with passively conduction-cooled heatsink that feature low bonding stress and low thermal resistance, made through an innovative packaging process. For laser diode (LD) chips with a 2 mm cavity length, the thermal resistance of the devices is about 0.27°C/W, and the thermal rollover power can reach 60 W at 150 A under continuous wave (CW) conditions. Moreover, these LD devices demonstrate high reliability under hard-pulse operating conditions.