Advanced multilevel photonic random-access memory utilizing low-loss GSSe phase-change material

We introduce a cutting-edge photonic random-access memory (P-RAM) that utilizes the broadband transparent phase-change material Ge2Sb2Se5 (GSSe) to achieve multilevel, nonvolatile storage capabilities on a silicon-on-insulator platform. This technology leverages the ultra-low absorption characteristics of GSSe in its amorphous state to facilitate high-efficiency optical data storage with minimal insertion losses, marking a substantial improvement over traditional phase-change materials like GST.