Paper 13369-27
Paper 13369-27
Silicon nitride integrated photonics: enabling versatile PICs for diverse applications (Invited Paper)
28 January 2025 • 1:20 PM - 1:50 PM PST | Moscone South, Room 307 (Level 3)
Abstract
The scope of photonic integrated circuits (PICs) has expanded to applications where the material properties of silicon present limitations. Silicon nitride (SiN) has emerged as a pivotal technology for the development of PICs, offering a complementary solution to silicon-based platforms due to its versatile optical properties. These properties have established SiN as an optimal material for a broad spectrum of applications, ranging from NIR to visible wavelengths. In this talk, we highlight our journey to demonstrate low-loss and low-temperature (<350°C) silicon nitride layers with refractive indices ranging between 1.5 and 2.7, showcasing their potential to enable enhanced linear and nonlinear functionalities in both near-infrared and visible wavelength regimes paving the way for innovative applications in various technological fields.
Presenter
Thalia Domínguez Bucio
Univ. of Southampton (United Kingdom)
Dr. T. Domínguez Bucio is a research fellow in the Silicon Photonics group at the Optoelectronics Research Centre (ORC) in the University of Southampton. She received her B. S. degree in electronic and computer engineering from the Monterrey Institute of Technology (Mexico, 2012) and her M.Sc. in photonic technologies from the University of Southampton (UK, 2013). In 2018, she received her PhD degree for the thesis entitled “NH3-free PECVD Silicon Nitride for Photonic Applications” at the ORC. Her research interests lie in the development of new material platforms, including silicon nitride, for photonic applications.