Paper 13369-10
Paper 13369-10
Mode-locked chip-integrated diode lasers in the visible spectral range
27 January 2025 • 4:55 PM - 5:15 PM PST | Moscone South, Room 307 (Level 3)
Abstract
Mode-locked miniaturized lasers in the infrared have been demonstrated through integration of laser diodes with low-loss photonic integrated circuits. However, additional challenges at shorter wavelengths, such as higher loss, smaller tolerances and availability of integrated saturable absorbers have prevented the realization of such lasers in the visible range.
Here, we demonstrate the first hybrid integrated mode-locked diode laser in the visible (λ=640 nm), based on a gallium-arsenide gain chip and a low-loss silicon nitride feedback chip.
The laser is passively mode-locked using a saturable absorber, realized through electrical isolation of part of the gain section by focused ion beam milling. The laser shows a broad range of driving parameters that support stable mode-locking, achieving a maximum average output power of 3.2 mW, with a spectral bandwidth of 1.5 nm. Measurements reveal a repetition rate of 7.84 GHz, with a corresponding Lorentzian RF linewidth component of 11.4 kHz.
Presenter
Univ. Twente (Netherlands)
Govert Neijts is an applied physics master student at the Laser Physics and Nonlinear Optics research group of the University of Twente, Enschede, the Netherlands. Here, he obtained his bachelor degree in applied physics where he worked on integrated frequency comb lasers. Currently he is working on ultrafast chip-integrated laser sources operating in the visible spectral range. During a research internship at the University of Sydney, Sydney, NSW, Australia, in 2023, he was responsible for a project which achieved a first demonstration of on-chip stimulated Brillouin scattering via surface acoustic waves.