Integrated ultra-high-speed vertical NAND FLASH VCSEL and high-power CMOS VCSEL for advanced silicon photonics applications

In recent years, Vertical NAND FLASH has replaced NOR FLASH in most of the handheld wireless digital markets, due to advantages of lower cost, higher packing density, and higher speed. However, the speed of NAND FLASH is still behind DRAM and SRAM used in computing tools, caused by the dielectric trapping, and tunneling processes, which result in longer WRITE and ERASE cycles. In this report, we will demonstrate an ultra-high-speed Photonic Vertical NAND FLASH with multiple VCSELs (Vertical Cavity Surface Emitting Laser), that may outperform DRAMs due to lower voltages and much faster nonvolatile memory operations. The new capability of integrated arrays of VCSELs with the high-speed Vertical Photonic NAND FLASH for lasing and nonvolatile data storage can be achieved.