Experimental and numerical study of dual-laser annealing process for semiconductor fabrication

A laser annealing technique to activate dopants is one of the essential processes to enhance the performance of advanced semiconductor device. In this study, experimental and numerical investigations of laser annealing process to activate phosphorus (P)-doped Si were conducted. More specifically, the laser annealing using dual-beam, a combination of continuous wave beam and pulsed beam, was explored to evaluate the feasibility of the dual-laser annealing in reducing thermal budget of the process and improving electrical properties of the P-doped Si. It was found that dual-beam process increased activation ratio of the P-doped Si while suppressing dopant diffusion.