Paper 13351-88
Paper 13351-88
Development of laser implantation of nickel and annealing process on silicon carbide substrates
On demand | Presented live 28 January 2025 
Abstract
In this study, we initially deposited a layer of Ni films onto a Silicon Carbide SiC substrate. We then employed a 532 nm pulsed laser to implant Ni films into the SiC substrate, followed by laser annealing to repair the crystal lattice of the SiC. The process involves multiple steps, including the deposition of Ni, laser implantation of Ni, and subsequent annealing, to optimize the material properties.
Presenter
Teng-I Yang
Taiwan Instrument Research Institute (Taiwan)
Teng-I Yang obtained his bachelor's degree in Electronic Physics from National Chiao Tung University. He pursued his master's degree specializing in OLED at the Graduate Institute of Photonics and Optoelectronics at National Taiwan University. Subsequently, he earned his Ph.D. from the same institute, focusing on lasers and material analysis. After completing his Ph.D., he conducted postdoctoral research on the two-photon and single-photon absorption of fluorescent nanodiamonds under ultraviolet light and pulsed lasers, as well as utilizing fluorescent nanodiamonds as extreme ultraviolet light imaging detectors. Over the past three years, he has published 5 papers in international journals, including Optical Materials Express (IF: 3.07), Optics Letters (IF: 3.6), Journal of Physical Chemistry Letters (IF: 6.88), and Nano Letters (IF: 12.262). His preliminary achievements were also honored with the Future Technology Award at the 2023 Future Technology Exhibition.