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ElFys, Inc.

Booth: 4119

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ElFys, Inc.
Tekniikantie 12
Espoo
Finland
02150
Website: www.elfys.fi

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30 September 2024
ElFys White Paper - High-performance photodiodes for wearable health monitoring
Wearable healthcare technology has gained widespread popularity, both in clinical settings and daily health monitoring. ElFys introduces an advancement with high-performance photodiodes (PDs) utilizing Black Silicon Induced Junction technology, aiming to enhance the accuracy and efficiency of wearable health monitors, particularly in photoplethysmography (PPG). Black Silicon Induced Junction Technology ElFys Black Silicon Induced Junction technology represents a radical departure from conventional PDs. This innovation is designed to eliminate optical losses and establish a recombination-free p-n junction, achieving near-ideal external quantum efficiency (EQE) across the UV-VIS-NIR spectrum. The nanostructured black silicon on the PD's front surface plays a pivotal role, offering virtually zero reflection for a wide range of wavelengths. At the core of wearable health monitoring is Photoplethysmography (PPG), a technique dependent on LEDs illuminating the skin while PDs measure transmitted or reflected light. ElFys' approach focuses on induced junction technology, creating a p-n junction without external dopants, effectively minimizing electrical losses and enhancing measurement accuracy. ElFys PDs achieve remarkable EQE, approaching 100% across the UV-VIS-NIR spectrum. This exceptional efficiency ensures the capture of every incident photon, surpassing the performance of traditional PDs optimized for specific wavelength ranges. The SM series, tailored for wearable health monitoring, exhibits noteworthy sensitivity improvements, particularly for green and red light. High-performance photodiodes for wearable health monitoring Selection of the PD has a major impact on the accuracy of the PPG measurement. Since the device is responsible for catching the transmitted or reflected light signal, its performance determines the quality of the raw measurement data regardless of the used software algorithm As presented in the previous section, ElFys provides high-performance PDs based on the patented Black Silicon Induced Junction technology. The ElFys SM product series is specifically designed for wearable health monitoring applications, where high sensitivity is required. These PDs are packaged in a surface-mount type of package with the PD attached on a printed circuit board (PCB) and molded in optical epoxy for surface protection. Standard sizes of 3.22 mm2 and 4.46 mm2 are available off the shelf for easy drop-in replacement, but the products can also be flexibly customized to fulfill customer-specific requirements. One of the most important parameters on PD performance for PPG applications is photoresponse, which tells how large output current the PD produces per Watts of incident light. Higher value means that smaller amount of light is enough to produce equally strong signal, or analogously, the electrical signal is stronger for the same amount of light. Figure 4 presents a typical response spectrum of packaged ElFys SM series products compared with another state-of-the-art PD often used for PPG. ElFys patented Black Silicon Induced Junction technology provides ~50 % improvement for the sensitivity at green, and the photoresponse is as high as 0.40 A/W at 540 nm wavelength. The response is nearly ideal also at red, where ElFys technology improves the performance by >15 % to 0.47 A/W at 630 nm. As the noise levels of the products compared in the figure 4 are similar, difference in response directly tells the difference in signal to noise ratio. ElFys SM components hence produce up to ~50 % higher signal with a given light intensity compared to other state-of-the-art products, meaning a great improvement in the PPG measurement accuracy. The higher sensitivity also means that smaller light intensity can be measured more accurately, and a weaker light signal produces equally strong electrical output from the PD. The LEDs of the PPG module can hence be driven with a smaller current, which reduces the power consumption of the measurement and provides a possibility to improve the device battery life. A third benefit of the higher photoresponse is that the same signal level can be obtained from a PD with a smaller footprint. This gives wearable device manufacturers more freedom in optimizing their design and enables making the devices ever smaller. Applications and Implications As the use of wearable healthcare technology proliferates in clinical and everyday contexts, the accuracy of vital sign monitoring, such as heart rate and blood oxygen levels, becomes crucial. ElFys Black Silicon Induced Junction PDs bring forth a host of benefits, from heightened sensitivity to reduced power consumption, setting a new standard for wearable health monitoring devices. Improved photodiode performance translates into tangible benefits for users of wearable health monitoring devices. Higher sensitivity enables the detection of new body parameters, potentially opening avenues for new applications. In medical use, heightened accuracy leads to more precise monitoring of vital signs, improving diagnosis and potentially saving lives. In sports, optical measurements have enabled heart rate-based training without the need for a separate chest strap. ElFys improved sensitivity addresses limitations in certain sports, ensuring high accuracy where needed. Moreover, in endurance sports, higher PD performance contributes to reduced energy consumption, crucial for activities lasting several days. ElFys Black Silicon Induced Junction technology is poised to usher in a new era of wearable health monitoring. As the demand for precision, portability, and energy efficiency continues to surge, ElFys PDs stand out as a pioneering solution. The implications stretch from medical applications to sports and fitness tracking, promising a future where wearables not only monitor health but do so with unprecedented accuracy and efficiency Read more: J. Heinonen et al. “Modeling field-effect in black silicon and its impact on device performance”, IEEE Transactions on Electron Devices, 67(4):1645–1652 (2020). M. A. Juntunen et al. “Near-unity quantum efficiency of broadband black silicon photodiodes with an induced junction”, Nature Photonics, 10(12): 777-781 (2016). Juha Heinonen, “High-sensitivity photodiodes using black silicon and induced junction”, Aalto University publication series DOCTORAL THESES, 36/2022. M. A. Juntunen et al., ”N-type Induced junction Black Silicon photodiode for UV detection”, Proc. SPIE 10249, Integrated Photonics: Materials, Devices, and Applications IV, 102490I (2017). M. Garin et al. ”Black silicon UV photodiodes achieve >130% external quantum efficiency”, Physical Review Letters, 125:117702 (2020). Author biography: Dr.Toni Pasanen works at ElFys, Inc. as a Senior Project Engineer and is one of the co-founders of the company. He holds a D.Sc. (Tech.) degree in Micro- and Nanosciences from Aalto University, Finland, and has a background in applied research on semiconductor-based optoelectronic devices. He has several years of experience in the design and fabrication of various types of light and radiation detectors and solar cells, as well as strong expertise on nanostructured black silicon surfaces and thin films. Dr. Pasanen has authored tens of peer-reviewed scientific articles, written a book chapter about the properties and applications of black silicon, and presented his research in several international conferences. Contact us to request full white paper
27 November 2024
A Sneak Peek Into ElFys Black Silicon 4-Quadrant Detector
ElFys is set to revolutionize the field of near-infrared (NIR) detection with the upcoming launch of its innovative 4-quadrant detector in January 2025. This groundbreaking technology promises to overcome traditional limitations in NIR detection, offering unprecedented performance and versatility across a wide range of applications. The 4-quadrant detector from ElFys leverages the company's proprietary Black Silicon technology, which has already garnered acclaim for its exceptional photosensitivity and quantum efficiency. By applying the cutting-edge approach to a quadrant detector design, ElFys has created a detector that combines high responsivity, low dark current, and fast response times with precise positional information. Potential applications of 4-Quadrant Detector One of the most exciting aspects of ElFys' 4-quadrant detector is its potential to enhance the performance of YAG laser (1064 nm) based systems. The detector's high sensitivity in the NIR range makes it ideal for accurately tracking and aligning YAG laser beams, which are widely used in industrial and scientific applications. Its ability to provide accurate positional data on incident light makes it an ideal choice for applications requiring fine adjustments and real-time feedback. The ElFys 4-Quadrant detector's exceptional sensitivity and precision in the NIR range make it a potential game-changer for defense systems. For laser-guided munition, the enhanced detector performance offers the capability to lock on to the target at longer distances. Furthermore, it also makes the system more robust against any disturbances in the air that weaken the signal, such as smoke or dust. As the demand for high-bandwidth, secure communication channels continue to grow, free-space optical links using lasers are becoming increasingly attractive. ElFys' 4-quadrant detector can play a crucial role in these systems, enabling accurate beam pointing and tracking over long distances, even in challenging atmospheric conditions. For applications in autocollimation, where precise angular measurements are required, the ElFys 4-quadrant detector offers a compelling solution. Its high sensitivity and positional accuracy make it well-suited for use in autocollimators, which are essential tools in fields such as optics, metrology, and mechanical engineering. Redefine the boundaries of NIR detection The ElFys 4-quadrant detector's high performance is established by the company's expertise in black silicon technology. This innovative approach allows for near-ideal external quantum efficiency across the UV-VIS-NIR spectrum, ensuring that virtually every incident photon is captured and converted into a measurable signal. The high quantum efficiency, combined with the detector's low noise characteristics, enables superior performance when detecting faint signals. As ElFys prepares to deliver the first samples of its 4-quadrant detector in January 2025, the anticipation within the optoelectronics community is palpable. The technology's potential to enhance existing applications and enable new possibilities in NIR detection is generating significant interest across multiple industries.   "At ElFys, we're not just pushing the boundaries of NIR detection, we're redefining them. Our 4-quadrant detector represents the culmination of years of research and development in black silicon technology. We're excited to see how this innovation will empower scientists, engineers, and industries to achieve new levels of precision and efficiency in their work. The applications we've identified are just the beginning – we believe this technology will open doors to possibilities we haven't even imagined yet. As we approach the launch in January 2025, we're not just introducing a new product; we're ushering in a new era of optical sensing capabilities."  Dr. Mikko Juntunen, CEO of ElFys.   The launch of ElFys' 4-quadrant detector represents a significant leap forward in NIR detection technology. By combining high sensitivity, precise positional information, and the benefits of black silicon technology, ElFys aims to address longstanding challenges in fields ranging from laser guidance to optical communication. As researchers and engineers eagerly await the opportunity to integrate this innovative detector into their systems, the future of NIR detection looks brighter than ever.   About ElFys, Inc. ElFys, Inc. was founded in 2017 and is located in Espoo, Finland. The company is based on long-term research work on photodetector technologies at Aalto University. Our core team consists of former senior researchers, engineering leaders and business professionals. The company utilizes the state-of-the-art processing facilities at Micronova Nanofabrication Center in Espoo, Finland: 2600 square meters of CMOS compatible facilities suitable for both R&D and semi-mass production. For high-volume mass production, ElFys has partnered with an external, European foundry. ElFys provides light sensors with sensitivity better than anything seen before, literally catching every ray of light. The technology greatly improves any light sensing application ranging from health monitoring to analytical instrumentation and security X-ray imaging. The superior performance of ElFys photodetectors is based on an inventive combination of modern MEMS nanotechnology and atomic layer deposition. The core technologies are patented and in the possession of the company. www.elfys.fi   About ElFys's patented technology   Most light sensing technologies capture about two thirds of light rays, whereas ElFys’ technology can capture all of them. The Black Silicon Photodiode provides superior sensitivity over a wide spectral range, especially in the ultraviolet, as well as an ultra-wide viewing angle. The increased sensitivity provides improvement potential to any applications where light needs to be measured.   Contact Monday – Friday 9am – 5pm (UTC+2) Email: media@elfys.fi Website: www.elfys.fi   Follow ElFys, Inc. on  LinkedIn | Youtube | X